Samsung Leads Next-Generation Networking with
Industry’s First 36Mb QDR™II SRAM
· 250 MHz bandwidth
· 1.8V operating voltage
· Performance four times greater than conventional
network SRAM
· QDR™II to be industry SRAM standard
· Mass-production to commence 3Q02
San Jose, Calif. – June 26, 2002: Samsung
Semiconductor, Inc., the world’s leading supplier of
advanced semiconductor memory technology, today announced
the industry’s first 36Mb Quad Data Rate™ II (QDRII)
SRAM memory device for high-performance telecommunications
applications. The new device, created in accordance with the
recently approved JEDEC specification for QDRII SRAM architectures,
offers engineers a significant performance boost for high-speed
networking designs.
Samsung’s new 36Mb QDRII SRAM is ideal for next-generation
communications applications including high-speed network switches,
routers and other telecommunications hardware. The device’s
high 250MHz bandwidth and low 1.8V operating requirement offer
high-speed performance, while reducing the power loading and
heat generation common to dense circuit board designs.
Unlike conventional synchronous SRAM, QDRII memory devices
have two data ports that run independently at Double Data
Rate (DDR), resulting in the transmission of four data words
per clock cycle, allowing the processing of four times as
much data as conventional networking SRAM. In addition to
its high speed, QDRII SRAM offers a wide data-valid window
of 65 percent of the clock cycle, facilitating ease of system
design.
Samsung’s new 36Mb QDRII SRAM is available in a 15mm
by 17mm 165-pin FBGA package, recently standardized by JEDEC.
Samsung and the QDR development team have recently created
specifications for a 144Mb QDRII SRAM device in a 165-pin
FBGA package.
“The 36Mb QDR II SRAM is another example of Samsung's
total commitment to provide leading-edge, high-performance
networking memory products. However, the real winners are
our networking customers who can utilize the high performance
of this quad data rate device in their next-generation systems.”
said Jon Kang, Samsung Electronics’ Executive Vice President
of Memory Division Product Planning and Application Team.
Samsung, the world’s largest SRAM producer since 1995,
is determined to maintain its leadership position by offering
customers an extensive portfolio of QDRII memory solutions
in a wide range of configurations and densities. By developing
the 36Mb QDRII SRAM device, Samsung officials expect to maintain
their industry leadership in the market for high-speed SRAM
used in next-generation networking systems. Samsung already
produces the Nt (no turnaround) RAM, which currently occupies
the top share of its SRAM market segment.
Samsung’s 36Mb QDRII SRAM memory device, part number
K7R3236(18/08)82M, is
sampling now. Mass-production to commence 3Q02.
Samsung QDRII & DDRII Memory Products
| Device |
Burst Length
|
Organization |
Part Number |
Frequency
MHz |
| QDR II |
2 |
x9
x18
x36 |
K7R320982M
K7R321882M
K7R323682M |
167, 200
167, 200
167, 200 |
| QDR II |
4 |
x18
x36 |
K7R321884M
K7R323684M |
167, 200, 250
167, 200, 250 |
| DDR CIO II |
2 |
x18
x36 |
K7R321884M
K7R323684M |
167, 200, 250
167, 200, 250 |
| DDR CIO II |
4 |
x18
x36 |
K7R321884M
K7R323684M |
167, 200, 250
167, 200, 250 |
| DDR SIO II |
2 |
x18
x36 |
K7R321884M
K7R323684M |
167, 200, 250
167, 200, 250 |
About the QDR Co-Development Team
In 1999, the QDR Co-Development Team was created to define
a new family of SRAM architectures for high-performance communications
applications. The QDR Co-Development Team currently consists
of Cypress, IDT, Micron, NEC, and Samsung. Hitachi has signed
a letter of intent to join the QDR co-development team and
is currently finalizing a formal agreement with the other
QDR team members. These companies cooperate in the development
of the QDR family of networking SRAM. They design and manufacture
this family of products in their own fabrication facilities
and develop products according to their own schedules, competing
in the marketplace. Additional information on the QDR SRAM
technologies, including roadmaps, is available at http://www.qdrsram.com/.
About Samsung Semiconductor, Inc.
Samsung Semiconductor, Inc. is a wholly owned US subsidiary
of Samsung Electronics Co., Ltd. Headquartered in Seoul, Korea,
Samsung Electronics is a mainstay of the global electronics
industry. It is the world’s leader in DRAM memory, SRAM
memory, and TFT-LCD display products for industrial, mobile
and desktop computing applications. Samsung Electronics is
one of the world’s largest semiconductor companies overall
with a full line of semiconductor products including Flash
memory, microprocessor and custom ASIC components. Samsung
Semiconductor, Inc. is located in San Jose, California. For
more information, please visit our website: http://www.usa.samsungsemi.com
Quad Data Rate, QDR and QDR II are trademarks of the QDR
Co-Development Team. All other registered trademarks or trademarks
are property of their respective owners.
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